22 NM FULLY
22 nm fully depleted SOI transistor on an insulating layer
22 nm fully depleted SOI transistor on an insulating layer
Official platform targeting low-power, RF, automotive and IoT designs
Automotive · Consumer Electronics · Telecommunications · +1
Public source
GlobalFoundries 22FDX is a publicly named fully depleted silicon-on-insulator process platform.
Silicon Showcase illustrative visual
Illustrative representation based on publicly available technical information.
22FDX is GlobalFoundries’ 22 nm fully depleted SOI platform: a thin-body transistor on an insulating layer, targeting low-power, RF, automotive and IoT designs that do not need leading-edge GAA.
Official GlobalFoundries technology pages present FDX FD-SOI as a 22 nm thin-body transistor on an insulating layer for low-power, RF, automotive and IoT designs. This listing records the 22FDX FD-SOI platform rather than 12LP, 45RFSOI and 22FDX as three foundry-node rows. Samsung GAA MBCFET, listed separately, is a different leading-edge transistor architecture. TSMC catalog listings are packaging, not this SOI substrate/process. Device details should be confirmed on GlobalFoundries’ current FDX pages.
Key characteristics associated with this technology.
22 nm fully depleted SOI transistor on an insulating layer
Official platform targeting low-power, RF, automotive and IoT designs
Complementary to leading-edge GAA FinFET nodes rather than a duplicate
Not separate listings for other GlobalFoundries nodes in this expansion
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