GATE-ALL-AROUND NANOSHEET TRANSISTORS
Gate-All-Around nanosheet transistors (MBCFET) replacing FinFET
Gate-All-Around nanosheet transistors (MBCFET) replacing FinFET
First described in 3 nm foundry production in 2022
Automotive · AI & HPC · Data Center · +1
Public source
Samsung GAA MBCFET is a publicly named foundry transistor architecture.
Silicon Showcase illustrative visual
Illustrative representation based on publicly available technical information.
Samsung’s 3 nm foundry node introduced Gate-All-Around transistors as Multi-Bridge-Channel FETs (MBCFET): stacked nanosheet channels with the gate on all four sides, replacing FinFET for better electrostatic control.
Official Samsung Semiconductor news dated 30 June 2022 describes start of 3 nm production using Gate-All-Around Multi-Bridge-Channel FETs, with stacked nanosheet channels and the gate on all four sides. Foundry logic-node pages present continued 3 nm and 2 nm GAA roadmap nodes. This listing records the GAA/MBCFET process platform rather than each SF node as a separate SKU. TSMC listings in the catalog are packaging technologies (CoWoS, InFO, SoIC, 3DFabric), not logic process nodes. Samsung Foundry is not a second organization; this process belongs to Samsung Semiconductor. PPA claims and node names should be confirmed on Samsung’s current foundry pages.
Key characteristics associated with this technology.
Gate-All-Around nanosheet transistors (MBCFET) replacing FinFET
First described in 3 nm foundry production in 2022
Process platform for mobile, HPC, AI and automotive designs
Not a separate Samsung Foundry organization row
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