Company
South Korea
Semiconductor company that publishes memory, foundry process and image-sensor technologies, including HBM, V10 BV-NAND and GAA MBCFET process platforms.
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Technologies
4
Technology Areas
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Applications
South Korea
Headquarters
Key technologies and platforms from this organization.
Samsung’s 3 nm foundry node introduced Gate-All-Around transistors as Multi-Bridge-Channel FETs (MBCFET): stacked nanosheet channels with the gate on all four sides, replacing FinFET for better electrostatic control.
AutomotiveAI & HPCView Details
Samsung HBM4 is the company’s current high-bandwidth DRAM stack for AI accelerators, with an advanced base die and stacked DRAM cubes. Samsung’s official HBM family page covers HBM3E through HBM4/HBM4E as the AI-memory roadmap.
AI & HPCData CenterView Details
Samsung V10 BV-NAND is bonded vertical NAND with more than 400 word lines, brought to mass-production readiness for AI storage.
AI & HPCData CenterView DetailsKey focus areas and application domains for this organization.
Key themes and trends derived from the published technologies of this organization on Silicon Showcase.
Samsung GAA MBCFET Process is published in Foundry / Process.
2 published technologies in Memory & Storage.
Published technologies associated with AI & HPC and Data Center.
Published technologies associated with Consumer Electronics and Automotive.
