BONDED VERTICAL NAND
Bonded vertical NAND generation
Bonded vertical NAND generation
More than 400 word lines, as described by Samsung
AI & HPC · Data Center · Consumer Electronics
Public source
V10 BV-NAND is the bonded 3D NAND generation Samsung Semiconductor described at FMS 2026.
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Illustrative representation based on publicly available technical information.
Samsung V10 BV-NAND is bonded vertical NAND with more than 400 word lines, brought to mass-production readiness for AI storage.
Samsung says the cell array and peripheral circuits are fabricated on separate wafers and bonded, with more than 400 word lines, and that the generation was brought to mass-production readiness. This listing records V10, not earlier V-NAND generations. Samsung describes mass-production readiness; this listing does not call it commercially available beyond that statement.
Key characteristics associated with this technology.
Bonded vertical NAND generation
More than 400 word lines, as described by Samsung
Brought to mass-production readiness; not described here as commercially available
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